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1. general description the 74HC3GU04 is a high-speed si-gate cmos device. this device provides three inverter gates with unbuffered outputs. the 74HC3GU04 has cmos input switching levels and supply voltage range 2 v to 6 v. 2. features n wide supply voltage range from 2.0 v to 6.0 v n symmetrical output impedance n high noise immunity n low-power dissipation n balanced propagation delays n multiple package options n esd protection: u hbm jesd22-a114e exceeds 2000 v u mm jesd22-a115-a exceeds 200 v n speci?ed from - 40 cto+85 c and - 40 c to +125 c 3. ordering information 4. marking 74HC3GU04 inverter rev. 03 11 may 2009 product data sheet table 1. ordering information type number package temperature range name description version 74HC3GU04dp - 40 c to +125 c tssop8 plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm sot505-2 74HC3GU04dc - 40 c to +125 c vssop8 plastic very thin shrink small outline package; 8 leads; body width 2.3 mm sot765-1 74HC3GU04gd - 40 c to +125 c xson8u plastic extremely thin small outline package; no leads; 8 terminals; utlp based; body 3 2 0.5 mm sot996-2 table 2. marking type number marking code 74HC3GU04dp hu04 74HC3GU04dc hu4 74HC3GU04gd hu4
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 2 of 16 nxp semiconductors 74HC3GU04 inverter 5. functional diagram 6. pinning information 6.1 pinning 6.2 pin description fig 1. logic symbol fig 2. iec logic symbol mna720 1a 1y 17 2a 2y 35 3a 3y 62 7 1 1 1 5 3 mna721 1 2 6 fig 3. pin con?guration sot505-2 (tssop8) and sot765-1 (vssop8) fig 4. pin con?guration sot996-2 (xson8u) 74HC3GU04 1a v cc 3y 1y 2a 3a gnd 2y 001aak022 1 2 3 4 6 5 8 7 001aak023 74HC3GU04 transparent top view 8 7 6 5 1 2 3 4 1a 3y 2a gnd v cc 1y 3a 2y table 3. pin description symbol pin description 1a, 2a, 3a 1, 3, 6 data input 1y, 2y, 3y 7, 5, 2 data output gnd 4 ground (0 v) v cc 8 supply voltage
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 3 of 16 nxp semiconductors 74HC3GU04 inverter 7. functional description [1] h = high voltage level; l = low voltage level. 8. limiting values [1] the input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] for tssop8 package: above 55 c the value of p tot derates linearly with 2.5 mw/k. for vssop8 package: above 110 c the value of p tot derates linearly with 8 mw/k. for xson8u package: above 118 c the value of p tot derates linearly with 7.8 mw/k. 9. recommended operating conditions table 4. function table [1] input output na ny lh hl table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage - 0.5 +7.0 v i ik input clamping current v i < - 0.5 v or v i >v cc + 0.5 v [1] - 20 ma i ok output clamping current v o < - 0.5 v or v o >v cc + 0.5 v [1] - 20 ma i o output current v o = - 0.5 v to (v cc + 0.5 v) [1] - 25 ma i cc quiescent supply current [1] -50ma i gnd ground current [1] - 50 - ma t stg storage temperature - 65 +150 c p tot total power dissipation t amb = - 40 c to +125 c [2] - 300 mw table 6. recommended operating conditions voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit v cc supply voltage 2.0 5.0 6.0 v v i input voltage 0 - v cc v v o output voltage 0 - v cc v t amb ambient temperature - 40 +25 +125 c d t/ d v input transition rise and fall rate v cc = 2.0 v - - 625 ns/v v cc = 4.5 v - 1.67 139 ns/v v cc = 6.0 v - - 83 ns/v
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 4 of 16 nxp semiconductors 74HC3GU04 inverter 10. static characteristics [1] all typical values are measured at t amb = 25 c. 11. dynamic characteristics table 7. static characteristics voltages are referenced to gnd (ground = 0 v). symbol parameter conditions - 40 c to +85 c - 40 c to +125 c unit min typ [1] max min max v ih high-level input voltage v cc = 2.0 v 1.7 1.1 - 1.7 - v v cc = 4.5 v 3.6 2.4 - 3.6 - v v cc = 6.0 v 4.8 3.1 - 4.8 - v v il low-level input voltage v cc = 2.0 v - 0.9 0.3 - 0.3 v v cc = 4.5 v - 2.1 0.9 - 0.9 v v cc = 6.0 v - 2.9 1.2 - 1.2 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 2.0 v 1.9 2.0 - 1.9 - v i o = - 20 m a; v cc = 4.5 v 4.4 4.5 - 4.4 - v i o = - 20 m a; v cc = 6.0 v 5.9 6.0 - 5.9 - v i o = - 4.0 ma; v cc = 4.5 v 4.13 4.32 - 3.7 - v i o = - 5.2 ma; v cc = 6.0 v 5.63 5.81 - 5.2 - v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 2.0 v - 0 0.1 - 0.1 v i o = 20 m a; v cc = 4.5 v - 0 0.1 - 0.1 v i o = 20 m a; v cc = 6.0 v - 0 0.1 - 0.1 v i o = 4.0 ma; v cc = 4.5 v - 0.15 0.33 - 0.4 v i o = 5.2 ma; v cc = 6.0 v - 0.16 0.33 - 0.4 v i i input leakage current v i =v cc or gnd; v cc = 6.0 v - - 1.0 - 1.0 m a i cc supply current per input pin; v i =v cc or gnd; i o = 0 a; v cc = 6.0 v - - 10 - 20 m a c i input capacitance - 3.0 - - - pf table 8. dynamic characteristics voltages are referenced to gnd (ground = 0 v); for test circuit see figure 6 . symbol parameter conditions - 40 c to +85 c - 40 c to +125 c unit min typ [1] max min max t pd propagation delay na to ny; see figure 5 [2] v cc = 2.0 v - 13 75 - 90 ns v cc = 4.5 v - 6 15 - 18 ns v cc = 6.0 v - 5 13 - 15 ns
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 5 of 16 nxp semiconductors 74HC3GU04 inverter [1] all typical values are measured at t amb = 25 c. [2] t pd is the same as t plh and t phl . [3] t t is the same as t tlh and t thl . [4] c pd is used to determine the dynamic power dissipation (p d in m w). p d = c pd v cc 2 f i n + s (c l v cc 2 f o ) where: f i = input frequency in mhz; f o = output frequency in mhz; c l = output load capacitance in pf; v cc = supply voltage in v; n = number of inputs switching; s (c l v cc 2 f o ) = sum of outputs. 12. waveforms t t transition time ny; see figure 5 [3] v cc = 2.0 v - 18 95 - 125 ns v cc = 4.5 v - 6 19 - 25 ns v cc = 6.0 v - 5 16 - 20 ns c pd power dissipation capacitance v i = gnd to v cc [4] -5- - -pf table 8. dynamic characteristics continued voltages are referenced to gnd (ground = 0 v); for test circuit see figure 6 . symbol parameter conditions - 40 c to +85 c - 40 c to +125 c unit min typ [1] max min max measurement points are given in t ab le 9 . fig 5. propagation delay data input (na) to data output (ny) and transition time output (ny) mna722 t plh t phl v m v m 90 % 10 % v m v m ny output na input v i gnd v oh v ol t tlh t thl table 9. measurement points type input output v m v m 74HC3GU04 0.5 v cc 0.5 v cc
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 6 of 16 nxp semiconductors 74HC3GU04 inverter test data is given in t ab le 10 . de?nitions for test circuit: r t = termination resistance should be equal to output impedance z o of the pulse generator. c l = load capacitance including jig and probe capacitance. r l = load resistance. s1 = test selection switch. fig 6. test circuit for measuring switching times v m v m t w t w 10 % 90 % 0 v v i v i negative pulse positive pulse 0 v v m v m 90 % 10 % t f t r t r t f 001aad983 dut v cc v cc v i v o r t r l s1 c l open g table 10. test data type input load s1 position v i t r , t f c l r l t phl , t plh 74HC3GU04 gnd to v cc 6 ns 50 pf 1 k w open
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 7 of 16 nxp semiconductors 74HC3GU04 inverter 12.1 additional characteristics v o is constant. fig 7. test set-up for measuring forward transconductance mna050 v cc r bias = 560 k w input 0.47 m f 100 m f output a gnd i o v i (f = 1 khz) g fs i o d v i d -------- - = t amb =25 c. fig 8. typical forward transconductance as a function of supply voltage 04 268 v cc (v) g fs (ma/v) 30 10 0 20 mnb124
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 8 of 16 nxp semiconductors 74HC3GU04 inverter 13. typical transfer characteristics 14. application information some applications for the 74HC3GU04 are: ? linear ampli?er (see figure 12 ) ? crystal oscillator (see figure 14 ). v cc = 2.0 v; i o = 0 a. v cc = 4.5 v; i o = 0 a. fig 9. typical transfer characteristics v cc = 2.0 v fig 10. typical transfer characteristics v cc = 4.5 v i cc ( m a) 0 1.2 0.4 1.6 2 v i (v) 0.8 0 150 90 120 30 60 v o (v) 0 2 1.2 1.6 0.4 0.8 mnb121 i cc (ma) 03 145 v i (v) 2 0 10 6 8 2 4 v o (v) 0 5 3 4 1 2 mnb122 v cc = 6.0 v; i o = 0 a. fig 11. typical transfer characteristics v cc = 6.0 v v i (v) i cc (ma) v o (v) 0246 20 12 16 4 0 6 3 0 8 mnb123
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 9 of 16 nxp semiconductors 74HC3GU04 inverter remark: all values given are typical values unless otherwise speci?ed. z l >10k w . r1 3 3k w . r2 1m w . open loop ampli?cation: a ol = 20 (typical). voltage ampli?cation: . v o(p-p) =v cc - 1.5 v centered at 0.5 v cc . unity gain bandwidth product is 5 mhz (typical). input capacitance see figure 13 . fig 12. linear ampli?er application (1) v cc = 2.0 v. (2) v cc = 4.5 v. (3) v cc = 6.0 v. fig 13. typical input capacitance as a function of the input voltage u04 r1 r2 v cc z l mna052 1 m f a v a ol 1 r1 r2 ------ - 1a ol + () + ----------------------------------------- C = 08 46 2 v i (v) 80 40 20 60 0 mna054 (1) (2) (3) input capacitance (pf)
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 10 of 16 nxp semiconductors 74HC3GU04 inverter test data is given in t ab le 11 and t ab le 12 . c1 = 47 pf (typical). c2 = 22 pf (typical). r1 = 1 m w to 10 m w (typical). r2 optimum value depends on the frequency and required stability against changes in v cc or average minimum i cc (i cc = 2 ma at v cc = 3.0 v and f = 1 mhz) fig 14. crystal oscillator application mna053 u04 out r2 r1 c1 c2 table 11. external components for resonator (f < 1 mhz) frequency r1 r2 c1 c2 10 khz to 15.9 khz 2.2 m w 220 k w 56 pf 20 pf 16 khz to 24.9 khz 2.2 m w 220 k w 56 pf 10 pf 25 khz to 54.9 khz 2.2 m w 100 k w 56 pf 10 pf 55 khz to 129.9 khz 2.2 m w 100 k w 47 pf 5 pf 130 khz to 199.9 khz 2.2 m w 47 k w 47 pf 5 pf 200 khz to 349.9 khz 2.2 m w 47 k w 47 pf 5 pf 350 khz to 600 khz 2.2 m w 47 k w 47 pf 5 pf table 12. optimum value for r2 frequency r2 optimum 3 khz 2.0 k w minimum required i cc 8.0 k w minimum in?uence due to change in v cc 6 khz 1.0 k w minimum required i cc 4.7 k w minimum in?uence by v cc 10 khz 0.5 k w minimum required i cc 2.0 k w minimum in?uence by v cc 14 khz 0.5 k w minimum required i cc 2.0 k w minimum in?uence by v cc > 14 khz replace r2 by c3 = 35 pf (typical)
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 11 of 16 nxp semiconductors 74HC3GU04 inverter 15. package outline fig 15. package outline sot505-2 (tssop8) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (1) z (1) q references outline version european projection issue date iec jedec jeita mm 0.15 0.00 0.95 0.75 0.38 0.22 0.18 0.08 3.1 2.9 3.1 2.9 0.65 4.1 3.9 0.70 0.35 8 0 0.13 0.1 0.2 0.5 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.47 0.33 sot505-2 - - - 02-01-16 w m b p d z e 0.25 14 8 5 q a 2 a 1 l p (a 3 ) detail x a l h e e c v m a x a y 2.5 5 mm 0 scale tssop8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm sot505-2 1.1 pin 1 index
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 12 of 16 nxp semiconductors 74HC3GU04 inverter fig 16. package outline sot765-1 (vssop8) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (2) z (1) q references outline version european projection issue date iec jedec jeita mm 0.15 0.00 0.85 0.60 0.27 0.17 0.23 0.08 2.1 1.9 2.4 2.2 0.5 3.2 3.0 0.4 0.1 8 0 0.13 0.1 0.2 0.4 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.40 0.15 q 0.21 0.19 sot765-1 mo-187 02-06-07 w m b p d z e 0.12 14 8 5 q a 2 a 1 q l p (a 3 ) detail x a l h e e c v m a x a y 2.5 5 mm 0 scale vssop8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm sot765-1 1 pin 1 index
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 13 of 16 nxp semiconductors 74HC3GU04 inverter fig 17. package outline sot996-2 (xson8u) references outline version european projection issue date iec jedec jeita sot996-2 - - - - - - sot996-2 07-12-18 07-12-21 unit a max mm 0.5 0.05 0.00 0.35 0.15 3.1 2.9 0.5 1.5 0.5 0.3 0.6 0.4 0.1 0.05 a 1 dimensions (mm are the original dimensions) xson8u: plastic extremely thin small outline package; no leads; 8 terminals; utlp based; body 3 x 2 x 0.5 mm 0 1 2 mm scale b d 2.1 1.9 e e e 1 l l 1 0.15 0.05 l 2 v w 0.05 y y 1 0.1 c y c y 1 x b 14 85 e 1 e a c b v m c w m l 2 l 1 l terminal 1 index area b a d e detail x a a 1
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 14 of 16 nxp semiconductors 74HC3GU04 inverter 16. abbreviations 17. revision history table 13. abbreviations acronym description cmos complementary metal oxide semiconductor dut device under test esd electrostatic discharge hbm human body model mm machine model ttl transistor-transistor logic table 14. revision history document id release date data sheet status change notice supersedes 74HC3GU04_3 20090511 product data sheet - 74HC3GU04_2 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? added type number 74HC3GU04gd (xson8u package) 74HC3GU04_2 20031126 product speci?cation - 74HC3GU04_1 74HC3GU04_1 20030818 product speci?cation - -
74HC3GU04_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 11 may 2009 15 of 16 nxp semiconductors 74HC3GU04 inverter 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 18.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 18.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 18.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 19. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors 74HC3GU04 inverter ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 11 may 2009 document identifier: 74HC3GU04_3 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 functional description . . . . . . . . . . . . . . . . . . . 3 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 recommended operating conditions. . . . . . . . 3 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11 dynamic characteristics . . . . . . . . . . . . . . . . . . 4 12 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 12.1 additional characteristics . . . . . . . . . . . . . . . . . 7 13 typical transfer characteristics . . . . . . . . . . . . 8 14 application information. . . . . . . . . . . . . . . . . . . 8 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 16 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 18 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 18.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 18.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 19 contact information. . . . . . . . . . . . . . . . . . . . . 15 20 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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